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November 2013
FDD5N50NZ
N-Channel UniFET TM II MOSFET
500 V, 4 A, 1.5 Ω
Features
? R DS(on) = 1.38 Ω (Typ.) @ V GS = 10 V, I D = 2 A
? Low Gate Charge (Typ. 9 nC)
? Low C rss (Typ. 4 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Imoroved Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET TM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T C =
25 o C
unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD5N50NZTM
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±25
4
2.4
V
A
I DM
Drain Current
- Pulsed
(Note 1)
16
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
304
4
6.2
10
62
0.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDD5N50NZTM
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.0
90
o
C/W
?2010 Fairchild Semiconductor Corporation
FDD5N50NZ Rev. C1
1
www.fairchildsemi.com
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